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Date

Journal

Title

312

2017.06.08

Scientific Reports

Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes

311

2017.03.14

IEEE Transactions on Electron Devices

Si CMOS Image-Sensors Designed With Hydrogen-Ion Implantation Induced Nanocavities for Enhancing Output Voltage Sensing Margin via Proximity Gettering

310

2017.01.22

Nano Energy

Enhanced Efficiency and Current Density of Solar Cells via Energy-down-shift Having Energy-tuning-effect of Highly UV-light-harvesting Mn2+-doped Quantum Dots

309

2016.12.08

Scientific Reports

Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

308

2016.11.22

The 7th International Symposium on Advanced Science and Technology of Silicon Materials

Design of Hydrogen-ion-implantation Induced Gettering for C-MOS Image Sensor

307

2016.11.04

NPG Asia Materials

Perpendicular magnetic tunnel junction (p-MTJ) spin-valves designed with a top Co2Fe6B2 free layer and a nanoscale-thick tungsten bridging and capping layer

306

2016.11.03

Applied Physics Letters

Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers

305

2016.10.31

Nanotechnology

Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 C

304

2016.10.03

ECS Transactions

Development of Silicon Substrate for Advanced Multi-Chip Packaging Process with Enhanced Gettering Ability

303

2016.09.27

Nanoscale Research Letters

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

302

2016.06.13

Nanotechnology

Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions

301

2016.05.15

Acta Materialia

Highly enhanced perpendicular magnetic anisotropic features in a CoFeB/MgO free layer via WN diffusion barrier

300

2016.05.01

Vacuum

Influence of pulsed bias frequency on the etching of magnetic tunneling junction materials

299

2015.11.23

Journal of Materials Chemistry C

Effects of the radio-frequency sputtering power of an MgO tunneling barrier on the tunneling magneto-resistance ratio for Co2Fe6B2/MgO-based perpendicular-magnetic tunnel junctions

298

2015.11.05

Nanotechnology

Co2Fe6B2/MgO-based perpendicular spintransfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt]n lower syntheticantiferromagnetic layer

297

2015.10.25

Journal of Industrial and Engineering Chemistry

Comparative Study on Photocatalytic Performances of Crystalline α- and β-Bi2O3 Nanoparticles under Visible Light

296

2015.08.20

Scientific Reports

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

295

2015.07.15

Journal of Materials Chemistry C

Nanoscale CuO Solid-electrolyte-based Conductive-bridging-random-access-memory Cell Operating Multi-level-cell and 1Selector1Resistor

294

2015.06.30

Journal of the Korean Physical Society

Effect of a Co-evaporated Alq3:Liq cathode buffer layer on the performance of a polymer photovoltaic cell  

293

2015.06.30

Journal of the Korean Physical Society

Effect of NH3 Plasma Passivation on the Electrical Characteristics of Nanolaminated ALD HfAlO on InGaAs MOS Capacitor

292

2015.06.15

Journal of the Korean Physical Society

Effect of Donor Weight in a P3HT:PCBM Blended Layer on the Characteristics of a Polymer Photovoltaic Cell

291

2015.04.21

Nanotechnology

Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd]n-SyAF layer

290

2015.04.15

Nanoscale

The dependency of tunnel magnetoresistance ratio on nanoscale thicknesses of Co2Fe6B2 free and pinned layers for Co2Fe6B2/MgO-based perpendicular-magnetic-tunnel-junctions

289

2015.04.15

Journal of Applied Physics

Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co2Fe6B2/MgO-based magnetic tunneling junctions

288

2015.01.10

Nano energy

Triboelectric energy harvester based on wearable textile platforms employing various surface morphologies

287

2014.12.08

Japanese Journal of Applied Physics

Impact of Tungsten Contamination on the Sensing Margin of a CMOS-image-sensor Cell

286

2014.12.01

Chemistry of Materials

Epitaxial growth of three-dimensionally mesostructured single crystalline Cu2O via templated electrodeposition

285

2014.12.01

Journal of Nanoscience and Nanotechnology

Effect of RF Pulsing Biasing on the Etching of Magnetic Tunnel Junction Materials Using CH3OH

284

2014.12.01

Journal of Nanoscience and Nanotechnology

Etch Characteristics of Magnetic Tunnel Junction Materials Using Bias Pulsing in the CH4/N2O Inductively Coupled Plasma

283

2014.11.10

Journal of Materials Chemistry A

Low-cost and Flexible Ultra-thin Silicon Solar Cell Implemented with Energy-down-shift via Cd0.5Zn0.5S/ZnS Core/shell Quantum Dots

282

2014.10.23

Journal of the Korean Physical Society

High Stability Transparent Amorphous Oxide TFT with a Silicon-doped Back-channel Layer

281

2014.10.09

Nanotechnology

Flexible Conductive-Bridging Random-Access-Memory Cell Vertically Stacked with Top Ag Electrode, PEO, PVK, and Bottom Pt Electrode

280

2014.08.29

Journal of Applied Physics

Effect of nanohole structure on pyramid textured surface on photo-voltaic performance of silicon solar cell

279

2014.08.11

Nanoscale

Effect of Core Quantum-dots Size on Power-conversion-efficiency for Silicon Solar-cells Implementing Energy-down-shift using CdSe/ZnS Core/Shell Quantum Dots

278

2014.08.07

Surface and Interface Analysis

Interface characterization of nitrogen plasmatreated gate oxide film formed by RTP technology

277

2014.07.15

Journal of Applied Physics

Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]n-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

276

2014.06.30

Physical Chemistry Chemical Physics

The energy-down-shift effect of Cd0.5Zn0.5S–ZnS core–shell quantum dots on power-conversion-efficiency enhancement in silicon solar cells

275

2014.06.17

Journal of Applied Physics

Dielectric function of Si1-xGex films grown on silicon-on-insulator substrates

274

2014.06.02

Current Photovoltaic Research

High-Power Conversion Efficiency of Photovoltaic Cells Fabricated with a Small-molecular and Polymer Donating Blend Layer

273

2014.04.01

Journal of the Korean Physical Society

Conductive-bridging Random-access Memory Cell Fabricated with a Top Ag Electrode, a Polyethylene Oxide Layer, and a Bottom Pt Electrode

272

2014.02.28

Journal of Ceramic Processing Research

Characterization of nano-scale strained silicon-on-insulator substrates by multiwavelength high resolution micro-raman and optical reflectance

271

2013.10.31

Applied Physics Letters

Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework

270

2013.10.16

Applied Physics Letters

Correlation of the Structural Properties of a Pt Seed Layer with the Perpendicular Magnetic Anisotropy Features of Full Heusler-based Co2FeAl/MgO/Co2Fe6B2 Junctions via a 12-inch scale Si Wafer Process

269

2013.10.01

Applied Surface Science

Environmentally Clean Slurry using Nano-TiO2-abrasive Mixed with Oxidizer H2O2 for Ruthenium-film Chemical Mechanical Planarization

268

2013.10.01

Applied Surface Science

Effect of Iron(III) Nitrate Concentration on Tungsten Chemical-Mechanical-Planarization Performance

267

2013.08.21

Nanoscale

Solution-processed Ag-doped ZnO Nanowires Grown on Flexible Polyester for Nanogenerator Applications

266

2013.07.01

Journal of the Korean Physical Society

Effects of Metallic Contaminant Type and Concentration on Photovoltaic Performance Degradation of p-type Silicon Solar Cells

265

2013.06.06

Applied Physics Express

Biological Synapse Behavior of Nanoparticle Organic Memory Field Effect Transistor Fabricated by Curing

264

2013.05.30

Applied Physics Letters

Effects of Pt capping layer on perpendicular magnet anisotropy in pseudospin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions

263

2013.05.17

ECS Journal of Solid State Science and Technology

Effect of β-cyclodextrin and Citric Acid on Chemical Mechanical Polishing of Polycrystalline Ge2Sb2Te5 in H2O2 Containing Slurry

262

2013.05.01

IEICE Transactions on Electronics

Nonvolatile Polymer Memory-Cell Embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene

261

2013.03.22

Solar Energy

Solar Cell Implemented with Silicon Nanowires on Pyramid-texture Silicon Surface

260

2013.02.22

Semiconductor Science and Technology

Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

259

2013.02.15

Journal of the Korean Physical Society

Effective Multi-step Ge Condensation Process Using Intermittent SiO2 Strip to Obtain a High-Ge Concentration and a Thick Ge-on-insulator (GeOI) Substrate for p-MOSFET

258

2013.02.15

Journal of the Korean Physical Society

Effect of 8-hydroxy-quinolinato lithium thickness on the power conversion efficiency of polymer photovoltaic cells

257

2013.02.15

Journal of Crystal Growth

Dependence of Nickel Gettering on Crystalline Nature in As-grown Czochralski Silicon Wafer

256

2013.01.03

ECS Journal of Solid State Science and Technology

Corrosion Inhibitors in Sodium Periodate Slurry for Chemical Mechanical Planarization of Ruthenium Film

255

2012.12.01

Journal of the Korean Physical Society

Effect of MeV Nitrogen Ion Implantation on the Resistivity Transition in Czochralski Silicon Wafers

254

2012.11.27

ECS Journal of Solid State Science and Technology

Effect of Oxidizers on Chemical Mechanical Planarization of Ruthenium with Colloidal Silica Based Slurry

253

2012.11.14

Japanese Journal of Applied Physics

Nonvolatile Hybrid Memory Cell Embedded with Ni Nanocrystals in Poly(3-hexylthiophene)  

252

2012.09.27

Thin Solid Films

High polishing selectivity ceria slurry for formation of top electrode in spin-transfer torque magnetic random access memory

251

2012.09.21

Journal of the Electrochemical Society

Effect of Slurry pH and H2O2 on Polycrystalline Ge2Sb2Te5 CMP Performance

250

2012.08.01

Journal of the Korean Physical Society

Effect of a Thermally Evaporated Bis (2-methyl-8-quninolinato)-4-phenylphenolate Cathode Buffer Layer on the Performance of Polymer Photovoltaic Cells

249

2012.07.23

Nanotechnology

Polymer photovoltaic cell embedded with p-type single walled carbon nanotubes fabricated by spray process

248

2012.04.04

재료마당(Trends in Metals & Materials Engineering)

실리콘 카바이드(SiC) CMP 슬러리의 연구 동향

247

2012.01.26

Journal of the Electrochemical Society

Effect of Molecular Weight of Polyvinylpyrrolidone on Corrosion-Inhibition Efficiency of Polycrystalline Ge2Sb2Te5 Film

246

2012.01.18

Journal of the Electrochemical Society

Effect of Potassium Ferricyanide in the Acid Solution on Performance of Tungsten Chemical Mechanical Planarization

245

2012.01.13

Journal of the Electrochemical Society

Study of Ruthenium Oxides Species on Ruthenium Chemical Mechanical Planarization Using Periodate-Based Slurry

244

2011.12.21

ADVANCED FUNCTIONAL MATERIALS

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks

243

2011.12.16

Journal of the Electrochemical Society

Influences of Organic Additive Molecular Weight in Colloidal-Silica-Based Slurry on Final Polishing Characteristics of Silicon Wafer

242

2011.11.30

한양대학교 산학과학연구소 논문지

향상된 load regulation을 가지는DC-DC Buck converter의 설계

241

2011.10.03

Applied Physics Express

Small-Molecule Nonvolatile Memory Cells Embedded with Ti Nanocrystals Surrounded by TiO2 Tunneling Barrier

240

2011.09.23

Electrochemical and Solid State Letters

Effect of Nonionic Polymer as Corrosion Inhibitor in Alkaline Media for Polycrystalline Ge2Sb2Te5 Chemical Mechanical Planarization

239

2011.09.01

대한전기학회논문지

A Design of LDO(Low Dropout Regulator) with Enhanced Settling Time and Regulation Property

238

2011.08.25

IEICE Electronics Express

Efficiency optimization of charge pump circuit in NAND FLASH memory

237

2011.08.11

Advanced Materials

p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires

236

2011.07.06

Nanotechnology

A multi-level capacitor-less memory cell fabricated on a nano-scale strained silicon-on-insulator

235

2011.06.15

Journal of the Korean Physical Society

Effect of the Physical and the Chemical Structures of Ni Nanocrystals on the Nonvolatile Memory Characteristics for Small-molecule Nonvolatile Memory cells Embedded with Ni Nanocrystals

234

2011.05.01

IEICE Transactions on Electronics

Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory

233

2011.04.19

Electrochemical and Solid State Letters

Effect of Small-Molecule Layer Thickness on Nonvolatile Memory Characteristics for Small-Molecule Memory-cells

232

2011.04.13

Journal of the Electrochemical Society

Chemical Mechanical Planarization Mechanism for Nitrogen-Doped Polycrystalline Ge2Sb2Te5 Film Using Nitric Acidic Slurry Added with Hydrogen Peroxide

231

2011.04.07

Journal of the Electrochemical Society

Effect of NH4OH Concentration on Surface Qualities of a Silicon Wafer after Final-Touch Polishing

230

2011.03.01

Current Applied Physics

Solution-processable fullerene derivatives for organic photovoltaics and n-type thin-film transistors

229

2011.03.01

Current Applied Physics

Dependence of nonvolatile memory characteristics on curing temperature for polymer memory-cell embedded with Au nanocrystals in Poly(N-vinylcarbazole)

228

2011.03.01

Current Applied Physics

Guest Editorial

227

2010.12.20

Japanese Journal of Applied Physics

Micro Defect Size in Si Single Crystal Grown by Czochralski Method

226

2010.12.15

Journal of the Korean Physical Society

Four-level Nonvolatile Small-molecule Memory-Cell Embedded with Fe Nanocrystals Surrounded with FeO and Fe2O3 Tunneling Barrier

225

2010.09.24

Proceedings - 2010 2nd IEEE International Conference on Network Infrastructure and Digital Content, IC-NIDC 2010

Fabricated nonvolatile memory with Ag nano-crystals embedded in PVK

224

2010.09.23

Journal of the Electrochemical Society

Potassium Permanganate as Oxidizer in Alkaline Slurry for Chemical Mechanical Planarization of Nitrogen-doped Polycrystalline Ge2Sb2Te5 Film

223

2010.08.10

Japanese Journal of Applied Physics

Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation

222

2010.06.01

Journal of Nanoscience and Nanotechnology

Device Performance and Polymer Layer Morphology in Polymer Bistable Device (PBD): The Control of Physicochemical Properties of Solvent

221

2010.05.14

Solar Energy Materials and Solar Cells

Effect of NiOx thin layer fabricated by oxygen-plasma treatment on polymer photovoltaic cell

220

2010.04.23

Applied Physics Letters

Capacitor-less memory-cell fabricated on nanoscale unstrained Si layer on strained SiGe layer-on-insulator

219

2010.04.20

Journal of the Electrochemical Society

Multiselectivity Chemical Mechanical Polishing for NAND Flash Memories beyond 32 nm

218

2010.04.27

ECS Transactions

Dependence of SOI Properties on Memory Characteristics in a Cap-less Memory Cell

217

2010.03.23

Japanese Journal of Applied Physics

Optimal Channel Ion Implantation for High Memory Margin of Capacitor-Less Memory Cell Fabricated on Fully Depleted Silicon-on-Insulator

216

2010.03.23

Japanese Journal of Applied Physics

Effects of Bulk Microdefects and Metallic Impurities on p-n Junction Leakage Currents in Silicon

215

2010.03.08

Electrochemical and Solid-state Letters

Role of Hydrogen Peroxide in Alkaline Slurry on the Polishing Rate of Polycrystalline Ge2Sb2Te5 Film in Chemical Mechanical Polishing

214

2010.03.04

Electrochemical and Solid-state Letters

Effect of Hydroxyethyl Cellulose Concentration on Surface Qualities of Silicon Wafer after Touch Polishing Process

213

2010.03.01

Current Applied Physics

Guest Editorial

212

2010.01.06

Japanese Journal of Applied Physics

Effect of Organic Additive on Surface Roughness of Polycrystalline Silicon Film after Chemical Mechanical Polishing

211

2009.12.10

Journal of Physical Chemistry C

Effect of Metal-Reflection and Surface-Roughness Properties on Power-Conversion Efficiency for Polymer Photovoltaic Cells

210

2009.12.06

Current Applied Physics

Nonvolatile Memory Characteristics of Small-molecule Memory Cells with Electron-transport and Hole-transport Bilayers

209

2009.12.06

Current Applied Physics

Effect of Interface Chemical Properties on Nonvolatile Memory Characteristics for Small-molecule Memory Cells Embedded with Ni Nanocrystals Surrounded by NiO

208

2009.11.10

Journal of the Electrochemical Society

Increase in the Adsorption Density of Anionic Molecules on Ceria for Defect-Free STI CMP

207

2009.10.13

Nanotechnology

The fabrication and characterization of organic light-emitting diodes using transparent single-crystal Si membranes

206

2009.08.01

Journal of Ceramic Processing Research

Electrical behavior of ultra-thin body silicon-on-insulator n-MOSFETs at a high operating temperature

205

2009.07.28

Nanotechnology

The effect of donor layer thickness on the power conversion efficiency of organic photovoltaic device fabricated with a double small-molecular layer

204

2009.07.01

Journal of the Korean Physical Society

Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices

203

2009.06.09

Journal of Nanoscience and Nanotechnology

High-removal selectivity through interaction between polyacrylamide and SiO2 film in poly isolation chemical mechanical planarization

202

2009.05.31

SYNTHETIC METALS

Impact of donor, acceptor, and blocking layer thickness on power conversion efficiency for small-molecular organic solar cell

201

2009.05.10

IEEE/SEMI

Quantifying yield impact of polishing induced defect on the silicon surface

200

2009.03.24

Nano Letters

Multilevel Nonvolatile Small-Molecule Memory Cell Embedded with Ni Nanocrystals Surrounded by a NiO Tunneling Barrier

199

2009.03.04

Electronic Materials Letters

Effect of Interface Thickness on Power Conversion Efficiency of Polymer Photovoltaic Cells

198

2009.02.17

Semiconductor Science and Technology

Comparative study of self-heating effect on electron mobility in nano-scale strained silicon-on-insulator and strained silicon grown on relaxed SiGe-on-insulator n-metal-oxide-semiconductor field-effect transistors

197

2009.01.16

Applied Physics Letters

Dependence of memory margin of Cap-less memory cell on top Si thickness

196

2008.12.02

Advanced Materials

Surface Polarity and Shape-Controlled Synthesis of ZnO Nanostructures on GaN Thin Films Based on Catalyst-Free Metalorganic Vapor Phase Epitaxy

195

2008.12.01

Journal of Materials Research

Effect of Abrasive Material Properties on Polishing Rate Selectivity of Nitrogen-doped Ge2Sb2Te5 to SiO2 Film in Chemical Mechanical Polishing

194

2008.11.07

Semiconductor Science and Technology

The impact of wafer nanotopography on threshold voltage variation in NAND flash memory cells fabricated with poly-silicon chemical mechnical polishing

193

2008.10.15

Journal of the Korean Physical Society

Hole Mobility Enhancement in Strained SiGe Grown on Silicon-on-insulator p-MOSFETs

192

2008.09.12

Journal of the Korean Physical Society

Selectivity Enhancement in the Removal of SiO2 and Si3N4 Films with Addition of Triethanolamine in a Ceria Slurry during Shallow Trench Isolation Chemical Mechanical Polishing

191

2008.09.01

Journal of Nanoscience and Nanotechnology

Titanium Dioxide Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition for OLED Passivation

190

2008.09.01

Ultramicroscopy

Crystalline Structure of Ceria Particles Controlled by the Oxygen Partial Pressure and STI CMP Performances

189

2008.08.15

Journal of the Korean Physical Society

Thin Transparent Single-Crystal Silicon Membranes Made Using a Silicon-on-Nitride Wafer

188

2008.08.03

18th Workshop on Crystalline Silicon Solar Cell & Modules: Materials and Processes Workshop Proceedings August

Dependency of Power Conversion Efficiency on Donor, Acceptor, and Blocking layer thickness for small-molecular Organic Solar Cell

187

2008.07.31

Electrochemical and Solid State Letters

Effect of Alkaline Agent on Polishing Rate of Nitrogen-Doped Ge2Sb2Te5 Film in Chemical Mechanical Polishing

186

2008.05.20

ECS Transactions

Hole Mobility Behavior in Strained SiGe-on-SOI p-MOSFETs

185

2008.05.20

ECS Transactions

Fabrication and Characterization of Organic Light-Emitting Diodes using Transparent Single-Crystal-Silicon Membrane

184

2008.05.20

ECS Transactions

Effect of Organic Amine in Colloidal Silica Slurry on Polishing-Rate Selectivity of Copper to Tantalum-nitride Film in Copper Chemical Mechanical Planarization

183

2008.05.20

ECS Transactions

Effect of Alkaline Agent with Organic Additive in Colloidal Silica Slurry on Polishing Rate Selectivity of Polysilicon-to-SiO2 in Polysilicon CMP

182

2008.05.13

Journal of Applied Physics

Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors

181

2008.04.18

Journal of Applied Physics

Silicon thickness fluctuation scattering dependence of electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors

180

2008.03.31

한국반도체및디스플레이장비학회지

Characterization of Organic Light-Emitting Diode (OLED) with Dual Emission using Al:Au Cathode

179

2008.03.27

MRS PV Materials Science and Technology for Nonvolatile Memories

Current Conduction Mechanism for Non-volatile Memory Fabricated with Conductive Polymer Embedded Au Nanocrystals

178

2008.03.26

MRS PV Materials Science and Technology for Nonvolatile Memories

Small Molecular Organic Nonvolatile Memory Fabricated with Ni Nanocrystals Embedded in Alq3

177

2008.03.26

MRS PV Materials Science and Technology for Nonvolatile Memories

Process Optimization of Ni Nanocrystals Formation Using O2 Plasma Oxidation to Fabricate Low-molecular Organic Nonvolatile Memory

176

2008.03.26

MRS PV Materials Science and Technology for Nonvolatile Memories

Effect of Au Nanocrystals Embedded in Conductive Polymer on Non-volatile Memory Window

175

2008.03.26

MRS PV Materials Science and Technology for Nonvolatile Memories

Dependence on Organic Thickness of Electrical Characteristics Behavior in Low Molecular Organic Nonvolatile Memory

174

2008.03.26

MRS PV Materials Science and Technology for Nonvolatile Memories

Current Conduction Mechanism for Low-molecular Organic Nonvolatile Memory

173

2008.03.10

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE

Effect of Physicochemical Properties of Solvents on Microstructure of Conducting Polymer Film for Non-Volatile Polymer Memory

172

2008.03.07

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE

Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2 plasma Oxidation

171

2008.01.31

SEMICON KOREA 2008 SEMI Technology Symposium(STS)

Polysilicon CMP for NAND Flash Memory beyond 45nm

170

2008.01.01

Journal of Materials Research

Constraints on removal of Si3N4 film with conformational-controlled poly(acrylic acid) in shallow-trench isolation chemical-mechanical planarization (STI CMP)

169

2007.12.06

Japanese Journal of Applied Physics Part 1

Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance

168

2007.12.06

SEMI Technology Symposium (STS) 2007

Effect of Organic Amine in Colloidal Silica Slurry for Copper Chemical Mechanical Polishing

167

2007.11.04

The 11th North-East Asia Symposium on Nano, Information Technology and Reliability

Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)

166

2007.09.15

Journal of Applied Physics

Impact of the top silicon thickness on phonon-limited electron mobility in (110)-oriented ultrathin-body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors

165

2007.08.06

Japanese Journal of Applied Physics Part 1

Nanotopography Impact of Surfactant Concentration and Molecular Weight of Nano-ceria Slurry on Remaining Oxide Thickness Variation after Shallow Trench Isolation Chemical Mechanical Polishing

164

2007.08.06

Japanese Journal of Applied Physics Part 1

Effect of Alkaline Agent in Colloidal Silica Slurry for Polycrystalline Silicon Chemical Mechanical Polishing

163

2007.07.14

Journal of the Korean Physical Society

Effects of the Size and the Concentration of the Abrasive in a Colloidal Silica (SiO2) Slurry with Added TMAH on Removal Selectivity of Polysilicon and Oxide Films in Polysilicon Chemical Mechanical Polishing

162

2007.06.06

Japanese Journal of Applied Physics Part 1

Dependence of Electrical Characteristics on Si Thickness and Ge Concentration for Unstrained Si Grown on Strained SiGe-on-Insulator n-Metal–Oxide–Semiconductor Field-Effect Transistor

161

2007.05.22

Journal of the Electrochemical Society

Influence of Crystalline Structure of Ceria on the Remaining Particles in the STI CMP

160

2007.05.15

Journal of the Korean Physical Society

Effect of O2 Plasma Treatment on Hole-Injection Enhancement for Organic Light-Emitting Devices with Transparent Au:Al Anodes

159

2007.05.13

The 10th North-East Asia Symposium on Nano, Information Technology and Reliability

Dependency of Current Conduction Bi-stability on Middle Al Thickness in Organic Bistable Device with Al Nano-crystals Embedded in α-NPD

158

2007.03.15

Journal of Materials Research

Effects of Arasive Particle Size and Molecular Weight of poly(acrylic acid) in Ceria Slurry on Removal Selectivity of SiO2/Si3N4 films in Shallow Trench Isolation Chemical Mechanical Planarization

157

2007.03.15

Solid State Phenomena

Effect of characteristics of nano-colloidal silica abrasives on wafer surface roughness for wafer touch polishing

156

2007.02.15

Journal of the Korean Physical Society

Post-RTA Effect on the Electrical Characteristics of Nano-Scale Strained Si Grown on SiGe-on-Insulator n-MOSFET

155

2007.02.15

Journal of the Korean Physical Society

Characteristics of Dual Emission Using a Thin Semi-Transparent Au Cathode for Organic Light-Emitting Devices

154

2007.01.15

Diffusion and Defect Data Pt.B: Solid State Phenomena

Dependency of electrical characteristics on Au nano-crystal size for non-volatile memory fabricated with Au nano-crystal embedded in PVK(poly(N-vinylcarbazole)) layer

153

2006.12.26

MRS PV

O2 Plasma Treatment of Al Layer on Matal Anode to Improve the Performance of Organic Light-Emitting Devices

152

2006.12.15

Journal of Electroceramics

The Effect of the physico-chemical properties of cellulosic polymers on the Si wafer polishing process

151

2006.12.15

Journal of Electroceramics

The effect of carboxymethyl cellulose swelling on the stability of natural graphite particulates in an aqueous medium for lithium ion battery anodes

150

2006.12.15

Journal of Electroceramics

Surface Modification of BaTiO3 with yttrium, and Dissolution and Adsorption / precipitation Behaviors of BaTiO3

149

2006.12.15

Journal of Electroceramics

Microstructural evolution of BaTiO3 / ultrahigh-molecular-weight poly(ethylene) (UHMWPE) cast body : influence of free organic additive in a nonaqueous medium

148

2006.12.15

Journal of Electroceramics

Improvement in the volume efficiency of multilayered ceramic capacitors (MLCCs)

147

2006.12.14

규슈대학응용역학연구소 전국공동이용연구회 논문집

Influence of Wafer Property on Future Semiconductor Device : Crystal Nature, Gettering, Nanotopography and Strained Silicon

146

2006.10.15

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Strained Si Engineering for Nanoscale MOSFETs

145

2006.10.15

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Extremely Proximity Gettering for Semiconductor Devices

144

2006.10.03

IEEE International SOI Conference

Post-RTA Effect on electrical characteristics of Nano-scale Strained Si Grown on SiGe-on-Insulator n-MOSFET

143

2006.09.07

Japanese Journal of Applied Physics Part 1

Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization

142

2006.09.--

한국반도체및디스플레이장비학회지

Characterization of the High Luminance Top Emission Organic Light-emitting Devices (TEOLEDs) Using Dual Cathode layer

141

2006.08.15

Journal of Applied Physics

Monte Carlo study of surface roughness scattering in Si inversion Layer with improved matrix element

140

2006.07.03

전자정보통신학회기술연구보고

Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers

139

2006.06.15

Journal of the Korean Physical Society

Organic Bi-Stable Device Fabricated with a Sandwich Structure of Al / AIDCN / Al Nano-Crystals Surrounded by Amorphous Al2O3 / AIDCN / Al

138

2006.06.08

Japanese Journal of Applied Physics Part 1

Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance

137

2006.05.09

Japanese Journal of Applied Physics Part 1

Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing

136

2006.05.--

한국재료학회지 (KOREAN Journal of Materials Research)

Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing

135

2006.04.01

Journal of the Korean Physical Society LETTERS

Effect of the Hydroxyl-Ethyl-Cellulose Concentration in a Silicon Wafer Polishing Slurry on the Wafer Surface Roughness

134

2006.04.--

NASNIT 2006

To Build Efficient Relationship in e-Commerce by CRM

133

2006.04.--

NASNIT 2006

Study on Development Direction of Construction Industry using RFID

132

2006.03.--

Journal of Ceramic Processing Research

Effect of Calcination Time on the Physical Properties of Synthesized Ceria Particles for the Shallow Trench Isolation Chemical Mechanical Planarization Process

131

2006.02.01

Journal of Materials Research

Atomic Force Microscopy Study of the Role of Molecular Weight of Poly(acrylic acid) in Chemical Mechanical Planarization for Shallow Trench Isolation

130

2005.12.08

Japanese Journal of Applied Physics Part 1

The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance

129

2005.12.02

Journal of Vacuum Science & Technology B

Investigation of multilayer structural changes in phase and amplitude-defects correction process

128

2005.12.--

Journal of Ceramic Processing Research

Comparison of phonon-limited electron mobility in strained Si grown on silicon on insulator (sSOI) and SiGe on insulator (SGOI)

127

2005.11.09

Japanese Journal of Applied Physics Part 1

Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing

126

2005.10.27

NASNIT 2005

Development of Dynamic Interface for Sensor

125

2005.10.15

Journal of the Korean Physical Society

Influences of pH and concentration of Surfactant on the Electrokinetic Behavior of a Nano-Ceria Slurry in shallow Trench Isolation Chemical Mechanical Polishing

124

2005.09.10

대한전자공학회지

Dependency of Phonon-limited Electron Mobility on Si Thickness in strained SGOI  (Silicon Germanium on Insulator) n-MOSFET

123

2005.09.01

물리학과 첨단기술

차세대 비휘발성 메모리 소자

122

2005.09.01

물리학과 첨단기술

PoRAM 최근 연구 동향 및 향후 개발 방향

121

2005.07.08

Japanese Journal of Applied Physics Part 1

Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing

120

2005.06.01

한국재료학회지 (KOREAN Journal of Materials Research)

Cu-CMP에서 Alanine이 Cu와 TaN의 선택비에 미치는 영향

119

2005.04.28

NASNIT 2005

Design of Compact PIFA for Mobile Communication Handset

118

2005.04.28

NASNIT 2005

Automatic System and Productivity Elevation

117

2005.04.01

Journal of the Korean Physical Society

Slip formation in 300-mm polished and epitaxial silicon wafers annealed by rapid thermal annealing

116

2005.03.20

The Magazine of the IEEK

PoRAM 최근연구동향

115

2005.01.28

Japanese Journal of Applied Physics Part 2

Effect of dispersant addition during ceria abrasive milling process on light point defect (LPD) formation after shallow trench isolation chemical mechanical polishing (STI-CMP)

114

2005.01.07

Japanese Journal of Applied Physics Part 2

Effects of abrasive size and surfactant concentration on the non-prestonian behavior of ceria slurry in shallow trench isolation chemical mechanical polishing

113

2004.12.24

한국반도체및디스플레이장비학회지

STI-CMP용 세리아 슬러리 공급시스템에서 거대입자와 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Effects of Large Particles and Filter Size in Central Chemical Supplying (CCS) System for STI-CMP on Light Point Defects (LPDs))

112

2004.12.01

한국산학연논문집 (JOURNAL OF KASBIR)

세리아 슬러리용 Central Chemical Supplying (CCS) 시스템의 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Filter Size Effect of Central Chemical Supplying (CCS) system for Ceria Slurry on Light Point Defects (LPDs))

111

2004.11.24

The 4th International Symposium on Advanced Science and Technology of Silicon Materials

Design of Extreme Proximity Gettering

110

2004.11.01

Japanese Journal of Applied Physics Part 1

Influence of physical characteristics of ceria particles on polishing rate of chemical mechanical planarization for shallow trench isolation

109

2004.11.01

Japanese Journal of Applied Physics Part 1

A reverse selectivity ceria slurry for the damascene gate chemical mechanical planarization process

108

2004.11.--

Journal of the Korean Physical Society

Characteristics of Ru barrier layer in Mo/Ru/Si multilayer for EUV reflector applications

107

2004.10.31

재료마당

Fabrication of Nano-scale Strained Silicon Grown on Relaxed SiGe on Insulator for Beyond Sub-micron C-MOS FET (나노 스케일 C-MOSFET에 적용되는 완충된 SiGe층 위에 성장된 나노스케일 변위 실리콘층을 가지는 SOI C-MOSFET)

106

2004.10.28

NASNIT 2004

Effect of Strained Si Thickness on Electron Scattering Rate in n-MOSFET Fabricated on Strained Si/SiGe/SiO2/Si

105

2004.10.28

NASNIT 2004

Design and Implementation of the Mobile Disaster Management Application System Based on PDA

104

2004.10.28

NASNIT 2004

CDS Reliability Test of Contents Aggregater for VOD/NVOD Service.

103

2004.10.--

Japanese Journal of Applied Physics Part 1

Extended defects and pile-up of interstitial oxygen in silicon wafer due to MeV-level nitrogen ion implantation

102

2004.10.--

대한전자공학회지

Effect of Ge mole fraction and Strained Si Thickness on Electron Mobility of FD n-MOSFET Fabricated on Strained Si/Relaxed SiGe/SiO2/Si

101

2004.10.--

Journal of the Korean Physical Society

Determination of the distribution and morphology of silicon islands in the buried oxide layer of SOI wafers by using a focused ion beam and transmission electron microscope

100

2004.09.--

Journal of Ceramic Processing Research

Proximity gettering process for 300-mm silicon wafers

99

2004.09.--

Journal of Ceramic Processing Research

Effect of nano-scale strained Si layer grown on SiGe-on-insulator structure on MOSFET drain current improvement

98

2004.08.16

ICEIC 2004 The International Conference on Electronic, informations, and Communications

A Study on the Optimization of the Layout for the ESD Protection Circuit in 0.18µm CMOS Silicide Process

97

2004.08.15

Japanese Journal of Applied Physics Part 2

Effect of molecular weight of surfactant in nano ceria slurry on shallow trench isolation chemical mechanical polishing (CMP)

96

2004.08.10

Japanese Journal of Applied Physics Part 1

Dependency of precipitation of interstitial oxygen on its crystal nature in Czochralski silicon wafer

95

2004.08.01

Journal of Rare Earths

Nanotopography impact in shallow trench isolation chemical mechanical polishing-dependence on slurry characteristics

94

2004.08.01

Journal of Rare Earths

Achievement of nano-scale SiGe layer with discrete Ge mole fraction profile using batch-type HVCVD

93

2004.08.--

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS

Nature of Surface and Bulk Defects Induced by Epitaxial Layer Growth in Epitaxial Transfer Wafers

92

2004.07.09

한국전기전자재료학회 2004년도 하계 학술대회 논문집

Nanotopography Simulation of Shallow Trench Isolation Chemical Mechanical Polishing using Nano Ceria Slurry

91

2004.06.25

한국반도체및디스플레이장비학회지

EUVL Mask Defect Isolation and Repair using Focused Ion Beam (Focused Ion Beam을 이용한 EUVL Mask Defect Isolation 및 Repair)

90

2004.06.01

Journal of Materials Research

Nanotopography Impact in Shallow-Trench Isolation Chemical Mechanical Polishing - Analysis Method and Consumable Dependence

89

2004.06.--

한국재료학회지 (KOREAN Journal of Materials Research)

Characteristic Study for Defect of Top Si and Buried Oxide Layer on the Bonded SOI Wafer

88

2004.05.28

2004년도 한국반도체및디스플레이장비학회 춘계학술대회 논문집

EUV Lithography Blank Mask Repair using a FIB

87

2004.04.15

Journal of the Korean Physical Society LETTERS

Effects of abrasive size and surfactant in nano ceria slurry for shallow trench isolation

86

2004.03.01

Japanese Journal of Applied Physics Part 2

Effects of Grain Size and Abrasive Size of Polycrystalline Nano-partical Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing

85

2004.03.01

한국반도체및디스플레이장비학회지

Effect of the Nano Ceria Slurry Characteristics on end Point Detection Technology for STI CMP

84

2004.03.--

The Engineering Magazine for Electronic Components Industry

초고집적 반도체 STI 연마 공정용세리아 슬러리의 특성이 나노토포그래피에 미치는 영향

83

2004.02.01

Japanese Journal of Applied Physics Part 2

Nanotopography impact and non-prestonian Behavior of ceria slurry in shallow trench isolation chemical mechanical polishing (STI-CMP)

82

2004.01.15

Japanese Journal of Applied Physics Part 2

Dependence of nanotopography impact on abrasive size and surfactant concentration in ceria slurry for shallow trench isolation chemical mechanical polishing

81

2003.12.31

한국산학연논문집 (JOURNAL OF KASBIR)

Effect of the Abrasive and Additive Concentrations in Nano Ceria Slurry on CMP Pad Temperature

80

2003.12.12

2003년도 한국반도체장비학회 추계학술대회 발표논문집

나노 세리아 슬러리에 첨가된 연마입자와 첨가제의 농도가 CMP 연마판 온도에 미치는 영향

79

2003.10.14

Chemical mechanical planarization VI

Effects of Abrasive Morphology and Surfactant in Nano-Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing

78

2003.10.14

Chemical mechanical planarization VI

Effect of Slurry Characteristics on Nanotopography Impact in Chemical Mechanical Polishing

77

2003.09.29

2003.10.02

2003 IEEE International SOI Conference

Effect of Nano-scale Strained Si Grown on SiGe-on-Insulator on Electron Mobility

76

2003.09.01

Japanese Journal of Applied Physics Part 1

Surfactant Effect on Oxide-to-nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing

75

2003.09.01

Journal of Materials Research

Influence of the electrokinetic behaviors of abrasive ceria particles and the deposited plasma-enhanced tetraethylorthosilicate and chemically vapor deposited Si3N4 films in an aqueous medium on chemical mechanical planarization for shallow trench isolation

74

2003.09.01

Japanese Journal of Applied Physics Part 1

Effect of slurry surfactant on nanotopography impact in chemical mechanical polishing

73

2003.09.--

MONTHLY SEMICONDUCTOR

나노 세리아 슬러리의 양산 공급 시스템

72

2003.07.16

STS:ISM SEMI Technology Symposium : Innovations in Semiconductor Manufacturing

High Selective Nano Ceria Slurry : Abrasive Size and Surfractant Effects

71

2003.07.14

Applied Physics Letters

Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers

70

2003.06.01

SOLID STATE COMMUNICATIONS

Crystal structures of two variants for CuPtb-type ordering in strained CdxZn1-xTe epilayers

69

2003.04.--

MONTHLY SEMICONDUCTOR

고성능 나노 세리아 슬러리 개발  - 256메가 DRAM급 이상 초고집적 반도체 STI 연마 공정용

68

2003.04.--

MICROELECTRONIC ENGINEERING

Dependence of crystal nature on the gettering efficiency of iron and nickel in a Czochralski silicon wafer

67

2003.03.15

Japanese Journal of Applied Physics Part 1

Effects of the physical characteristics of cerium oxide on plasma-enhanced tetraethylorthosiliate removal rate of chemical mechanical polishing for shallow trench isolation

66

2003.03.15

Japanese Journal of Applied Physics Part 1

Effects of abrasive morphology and surfactant concentration on polishing rate of ceria slurry

65

2003.02.20

INTERNATIONAL SYMPOSIUM ON MOLECULAR-ENGINEERING ITS DEVELOPMENT INTO MICROSYSTEMS

Electron Mobility Behavior in Ultra Thin and Strained Si Inversion Layer Grown on SiGe-On-Insulator for 50nm MOS-FETs

64

2002.10.25

CKSSI 2002

Polishing Condition Dependency of Nanotopography Impacts on Oxide Chemical Mechanical Polishing

63

2002.10.25

CKSSI 2002

Electronic parameter variations of the two-dimensional electron gas in modulation-doped nanoscale step quantum wells due to a nanosize embedded potential barrier

62

2002.10.25

CKSSI 2002

Effect of Slurry and Pad on Nanotopography Impact on Oxide CMP

61

2002.10.25

CKSSI 2002

Application of MPEG-4 Video to Standalone-based Unmanned Monitoring System

60

2002.10.25

CKSSI 2002

A Study of Interactive T-Commerce Service based on Data Broadcasting

59

2002.10.--

Journal of the Korean Physical Society

Effect of crystallinity of ceria particles on the PETEOS removal rate in chemical mechanical polishing for shallow trench isolation

58

2002.07.24

SEMICON WEST 2002 STS 112

New Spectral Analysis Method to Quantify Nanotopography Impact on CMP

57

2002.07.11

Journal of Ceramic Processing Research

The effect of agglomerated particle size on the chemical mechanical planarization for shallow trench isolation

56

2002.07.01

Japanese Journal of Applied Physics Part 1

The stability of nano fumed silica particles and its influence on chemical mechanical planarization for interlayer dielectrics

55

2002.07.01

Proceeding of the Fifth International Symposium on  CMP, 201st Meeting of ECS

Spectral Analysis Method for Nanotopography Impact on Pad and Removal Depth Dependency in Oxide CMP

54

2002.07.01

Proceeding of the Fifth International Symposium on  CMP, 201st Meeting of ECS

Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide CMP

53

2002.07.01

TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA (Rare metal)

Abrasive and Surfactant Effects on Ceria Slurry for Chemical Mechanical Polishing in Shallow Trench Isolation

52

2002.05.11

The 1st China-Korea Symposium on Semiconductor

Characterization of surface and bulk defects for SOI wafer

51

2002.04.15

Japanese Journal of Applied Physics Part 2

The nanotopography effect of improved single-side-polished wafer on oxide chemical mechanical polishing

50

2002.01.15

Japanese Journal of Applied Physics Part 2

Spectral analyses on pad dependency of nanotopography impact on oxide chemical mechanical polishing

49

2002.01.15

Journal of the Korean Physical Society

Effects of film type and nanotopography of wafers on oxide CMP characteristics

48

2001.12.18

Journal of the Korean Physical Society

The Effect of Si Dissolution on the Stability of Silica Particles and Its Influence on Chemical Mechanical Polishing for Interlayer Dielectrics

47

2001.12.18

Journal of the Korean Physical Society

Modification of Electrokinetic Behavior of CeO2 Abrasive Particles in Chemical Mechanical Polishing for shallow Trench Isolation

46

2001.12.18

Journal of the Korean Physical Society

Effects of pattern density on CMP removal rate and uniformity

45

2001.12.18

Journal of the Korean Physical Society

Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution

44

2001.12.18

Journal of the Korean Physical Society

Effect of Film Type and Wafer Shape on Oxide CMP Characteristics

43

2001.11.28

일본결정성장학회 (JOURNAL OF THE JAPANESE ASSOCIATION OF CRYSTAL GROWTH)

Defects in 300mm crystal and their control

42

2001.08.15

Japanese Journal of Applied Physics Part 1

Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing

41

2001.06.17

Solid State Technology

Defect reduction and improved gettering in CZ single-crystal silicon

40

2001.04.01

Japanese Journal of Applied Physics Part 1

Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers

39

2001.04.01

Journal of the Korean Physical Society

Crystal originated particle induced oxide breakdown in Czochralski silicon wafer

38

2000.12.01

Solid State Technology

CZ single-crystal silicon without grown-in defects

37

2000.11.24

3rd Advanced Science and Technology of Silicon Materials

Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI

36

2000.11.21

3rd Advanced Science and Technology of Silicon Materials

Quality of Grown-in Defects Free CZ silicon Single Crystal, "Pure Silicon"

35

2000.07.01

일본결정성장학회 (JOURNAL OF THE JAPANESE ASSOCIATION OF CRYSTAL GROWTH)

Growth Technology of CZ Silicon Single Crystals without Grown-in Defects

34

2000.07.01

일본결정성장학회 (JOURNAL OF THE JAPANESE ASSOCIATION OF CRYSTAL GROWTH)

Advanced Czochralski Single Silicon Crystal Growth

33

2000.01.01

Japanese Journal of Applied Physics Part 1

Crystal originated particle induced isolation failure in Czochralski silicon wafers

32

1999.10.--

ECS PV 99-18 ULSI Process Integration 196th Meeting of the Electrochemical Society

Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution

31

1999.10.--

ECS PV 99-18 ULSI Process Integration 196th Meeting of the Electrochemical Society

COP induced isolation Failure in CZ Si Wafers

30

1999.09.01

Journal of Applied Physics

Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing

29

1999.07.12

SEMICON WEST 1999 Silicon Wafer Symposium

Challenges of Material Properties for Advanced DRAM Devices

28

1999.01.01

Opto-electronics Review

Numerical Simulations for HgCdTe related detectors

27

1999.01.01

Opto-electronics Review

Novel electron mobility model for n-HgCdTe

26

1999.01.01

ECS PV 99-1 Silicon-on-Insulator Technology and Devices

Effect of crystal defects such as COPs, Large dislocations, and OSF-ring on device integrity degradation

25

1998.09.28

SEMI SILICON WAFER SYMPOSIUM

Wafer Requirements : Memory Devices

24

1998.--.--

SAMSUNG SEMICONDUCTOR TECHNICAL CONFERENCE

COP induced oxide breakdown decorated by Cu in CZ Si

23

1998.--.--

SEMICON KOREA TECHNICAL SYMPOSIUM 98

Challenge of Material Properties for 300mm Wafers

22

1997.--.--

Proceedings of the Symposium on Crystalline Defects and Contamination: Their Impact And Control In Device Manufacturing II

Effect of Crystal Defects on Device Characteristics

21

1997.--.--

SEMICONDUCTOR TECHNOLOGY SYMPOSIUM

300mm Wafer Technology

20

1997.10.08

한국재료학회지 (KOREAN Journal of Materials Research)

Ni/3C-SiC 계면의 Ohmic 특성

19

1996.--.--

SAMSUNG SEMICONDUCTOR TECHNICAL JOURNAL

Effect of Crystal Characteristics on the DRAM Device Yield

18

1996.--.--

Solid State Phenomena

DRAM Wafer Qualification Issues : Oxide integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing

17

1996.11.25

2nd International Symposium on Advanced Science and Technology of Silicon Materials

Effect of Crystal Defects on Device Characteristics

16

1996.10.--

Defect Engineering in Submicron Process Technologies

Wafer Engineering for DRAM Devices

15

1995.--.--

SAMSUNG SEMICONDUTOR TECHNICAL JOURNAL

Observation of Structural, Electrical, and Chemical Nature on Multi-ring Wafer

14

1995.--.--

MATERIALS SCIENCE FORUM

Nature of D-defect in CZ Silicon : D-defect Dissolution and D-Defect Related T.D.D.B

13

1995.--.--

ECS PV 95-5 ULSI SCIENCE AND TECHNOLOGY

Gate Oxide Integrity in DRAM Devices : The Influence of Substrate D-defects

12

1995.--.--

ECS PV 95-5 ULSI SCIENCE AND TECHNOLOGY

Effect of H2 Annealing on Oxide Integrity Improvement

11

1995.--.--

SAMSUNG SEMICONDUTOR TECHNICAL JOURNAL

Defect Oxide Defect Detection by Cu-decoration

10

1995.03.20

9th INTERNATIONAL MICROSCOPY SEMICONDUCTOR MATERIAL SERIES

Effect of D-defects and Oxygen Precipitates on Oxide Integrity

9

1994.--.--

ECS PV 94-1 THE DEGRADATION OF ELECTRONIC DEVICE DUE TO DEVICE OPERATION AS WELL AS CRYSTALLINE AND PROCESS-INDUCED DEFECTS

Temperature Dependent Electron Beam Induced Current Studies of MOS Capacitor Structures

8

1994.--.--

ECS PV 94-10 SEMICONDUCTOR SILICON

Structure and Morphology of "D-defects" in CZ Si

7

1994.--.--

ECS PV 94-1 THE DEGRADATION OF ELECTRONIC DEVICE DUE TO DEVICE OPERATION AS WELL AS CRYSTALLINE AND PROCESS-INDUCED DEFECTS

Correlation of Substrate D-defects in CZ Silicon with MOS Breakdown Site via MOS/EBIC, FIB, and TEM

6

1994.--.--

ECS PV 94-33 DIAGOSTIC THECHNIQUES FOR SEMICONDUCTOR MATERIALS AND DEVICES

Comparison of Oxide Breakdown Mechanisms Due to D-defects and Oxygen Precipitates

5

1993.07.01

The Physics and Chemistry of SIO2 and the Si-SiO2 Interface 2

Effects of Metallic Impurities upon Thin Gate Oxide Integrity and Related Bulk Properties in CZ Si

4

1993.07.01

The Physics and Chemistry of SIO2 and the Si-SiO2 Interface 2

Effects of D-defects in CZ Silicon upon Thin Gate Oxide Integrity

3

1992.--.--

MRS PV

Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity

2

1991.09.01

ECS PV 91-9 DEFECTS IN SILICON Ⅱ

Substrate and a Pre-initial Oxidation Internal Gettering Treatment upon 256 K Dynamic Randon Access Memory

1

1991.09.01

ECS PV 91-9 DEFECTS IN SILICON Ⅱ

Effects of Carbon and Oxygen Impurities in Czochralski Si upon Device Performance and Yield of 1 Mb Dynamic Random Access Memory

 

Recent Update: AUG. 04, 2017